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Jensen Huang, CEO of Nvidia, visited Samsung Electronics’ booth at ‘GTC 2024’ and left a handwritten approval for their 5th generation high-bandwidth memory ‘HBM3E’ 12-layer product.
Previously, Huang had announced through a global media briefing that he had tested Samsung’s HBM and had high expectations.
This handwritten approval from CEO Huang is interpreted as an action reflecting his high expectations for Samsung’s HBM.
It suggests the possibility of this product being mounted on Nvidia’s Artificial Intelligence (AI) accelerators has increased.
Han Jin-man, Vice President of Samsung Electronics, said, “It’s regrettable not to meet Jensen Huang. Thank you for visiting our booth,” and posted Huang’s handwritten signature on his SNS.
Samsung’s HBM3E is an innovative product that offers a maximum bandwidth of 1280GB per second and a maximum capacity of 36GB from 1024 input/output paths (I/O). It has started providing samples to customers and plans to begin mass production in the first half of this year.
As indicated by comments from Huang and Han Jin-man, Vice President of Samsung Electronics, there is growing anticipation for Jensen Huang’s next moves with Samsung’s semiconductors and Nvidia and increased cooperation between the two companies.
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SK Hynix, which showcased a 12-layer (36GB) HBM3E sample at this event, is expected to be the first memory company to supply the 5th generation HBM3E (8-layer·24GB) DRAM to Nvidia by the end of this month.
A Samsung Electronics official told Alpha Economy, “Jensen Huang’s handwritten approval is not a confirmation of validation, but a positive message that we will have a good cooperative relationship in the future.”
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